| PART |
Description |
Maker |
| LPD200MX |
HIGH PERFORMANCE PHEMT
PACKAGED HIGH DYNAMIC RANGE PHEMT
|
Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
| BCP060T |
HIGH EFFICIENCY pHEMT POWER FET CHIP
|
BeRex Corporation
|
| AS192-300 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz
PHEMT GaAs IC High Power SP4T Switch 0.1.5 GHz
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| AS192-000 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz
|
Skyworks Solutions
|
| AS197-306 |
PHEMT GaAs IC High Power SP2T and SP3T Switch 0.1-2.5 GHz
|
Skyworks Solutions
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| AS202-321 |
ER 8C 8#16 PIN RECP
PHEMT GaAs IC High Power SP3T Switch DC GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| BT301 |
500-4000 MHz High Power Amplifier
|
BeRex Corporation
|
| SGC-23861 SGC-2386Z |
50 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
|
SIRENZA MICRODEVICES INC
|
| HMC490LP5 |
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER/ 12 - 16 GHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
